- 2022.02 - Present Seoul National Univ. of Science and Technology (Assistant Professor)
- 2014.02 – 2022.01 SK Hynix (Senior Engineer)
- Surface-controlled Ultrathin (2 nm) Poly-Si Channel Junctionless FET towards 3D NAND Flash Memory Applications, Symposium on VLSI Technology, 2014
- Origin of transient Vth shift after erase and its impact on 2D/3D structure charge trap Flash memory cell operations, International Electron Devices Meeting (IEDM), 2012
- Dramatic Improvement of high-K Gate Dielectric Reliability by Replacing Metal Gate Electrode with Mono-Layer Graphene, Symposium on VLSI Technology, 2012
- Graphene Gate Electrode for MOS Structure Based Electronic Devices, Nano Lett., vol. 11, no.12, pp. 5383-5386, 2011
- A Review of Cell Operation Algorithm for 3D NAND Flash Memory, Applied Sciences, vol. 11, no. 21, pp. 10697, 2022
- Dependence of grain size on the performance of a polysilicon channel TFT for 3D NAND flash memory, J. Nanosci. & Nanotech., vol. 16, no. 5, pp. 5044-5048, 2015
- Improvement of the multi-level cell performance by a Soft Program Method in Flash Memory Devices, Solid State Electron., vol. 94, pp. 86-90, 2014
- Comparative Study of Chemically Synthesized and Exfoliated Multilayer MoS2 Field Effect Transistors, Appl. Phys. Lett., vol. 102, pp. 043116, 2013
- Improvement of Charge Retention in Flash Memory Devices by Very Light Doping of Lanthanum into an Aluminum-Oxide Blocking Layer, Appl. Phys. Express, vol. 5, pp. 081102-1~081102-3, 2012
- Determination of Work Function of Graphene under a Metal Electrode and Its Role in Contact Resistance, Nano Lett., vol.12, no.8, pp 3887-3892, 2012
- Graphene Gate Electrode for MOS Structure Based Electronic Devices, Nano Lett., vol. 11, no.12, pp. 5383-5386, 2011
- Lanthanum-Oxide-Doped Nitride Charge Trap Layer for a TANOS Memory Device, IEEE Trans. Electron Devices, vol. 58, no. 10, pp. 3314-3320, 2011
- Mechanism of Date Retention Improvement by High Temperature Annealing of Al2O3 Blocking Layer in Flash Memory Device", Jpn. J. Appl. Phys., vol. 50, no. 4, pp. 04DD07-1-04DD07-5, 2011
- Cubic-Structured HfLaO for the Blocking Layer of a Charge-Trap Type Flash Memory Device, Appl. Phys. Express, vol. 3, no. 20, pp. 091501-1-091501-3, 2010
- Improvement of Memory Performance by High Temperature Annealing of the Al2O3 Blocking Layer in a Charge-Trap Type Flash Memory Device, Appl. Phys. Lett., vol. 96, no. 22, pp. 222902-1-222902-3, 2010
- Structural and Compositional Dependence of Gadolinium-Aluminum Oxide for the Application of Charge-Trap-Type Non-Volatile Memory Devices, Appl. Phys. Lett., vol. 96, no. 5, pp. 052907-1-052907-3, 2010
◾ A Review on the Bonding Characteristics of SiCN for Low-temperature Cu Hybrid Bonding, Jornal of the Microelectronics and Packaging Society, vol.30 No.4 pp.8~16, 2023박종경
◾ Guidelines for Area Ratio between Metal Lines and Vias to Improve the Reliability of Interconnect Systems in High-Density Electronic Devices, electronics, vol.12 No.21, 2023박종경
◾ A Review of Cell Operation Algorithm for 3D NAND Flash Memory, Applied Sciences, vol.12 No.21, 2022박종경
- Jong Kyung Park, Seung-Yoon Kim, Ki-Hong Lee, Seung Ho Pyi, Seok-Hee Lee, and Byung Jin Cho, "Surface-controlled Ultrathin (2 nm) Poly-Si Channel Junctionless FET towards 3D NAND Flash Memory Applications", Symposium on VLSI Technology, Hawaii, USA, June 9-13, 2014
- 박종경, 이석희, 이기홍, 피승호, 조병진, "플래쉬 메모리 소자에서의 초기 VT 불안정 현상 개선에 관한 연구", 20th Korean Conference on Semiconductors, Hoengsung,
Korea, Feb 4-6, 2013
- 송승민, 박종경, 설원제, 조병진, "그래핀의 work-function 변이에 관한 연구", 20th
Korean Conference on Semiconductors, Hoengsung, Korea, Feb 4-6, 2013.
- Jong Kyung Park, Seok-Hee Lee, Ki-Hong Lee, Seung Ho Pyi, and Byung Jin Cho, " Dramatic Increase of Dielectric Constant of Al2O3 by Very Light Doping of La and Thermal Treatment and Its Application to Flash Memory Device ", 19th Korean Conference on Semiconductors, Seoul, Korea, Feb. 2012
- BJ Cho, SM Song, and JK Park, "Issues on Metal Contact and Gate Electrode of Graphene Based FET", The 4th International Conference on Recent Progress in Graphene Research (RPGR) 2012, p. 26, Beijing, China, Oct. 3-6, 2012 (Invited)
- Jong Kyung Park, Dong-Il Moon, Yang-Kyu Choi, Seok-Hee Lee, Ki-Hong Lee, Seung Ho Pyi, and Byung Jin Cho, "Origin of transient Vth shift after erase and its impact on 2D/3D structure charge trap Flash memory cell operations", International Electron Devices Meeting, San Francisco, CA, USA, Dec. 10-12, 2012
- Jong Kyung Park, Seung Min Song, Jeong Hun Mun, and Byung Jin Cho, "Dramatic Improvement of high-K Gate Dielectric Reliability by Replacing Metal Gate Electrode with Mono-Layer Graphene", Symposium on VLSI Technology, Hawaii, USA, Jun. 12-15, 2012
- Jong Kyung Park, Seung Min Song, Jeong Hun Mun, and Byung Jin Cho, "Graphene Gate Electrode for Advanced Silicon-Based CMOS Devices", Graphene Week 2012, Delft, Netherlands, Jun. 4-8, 2012
- 송승민, 박종경, 조병진, "금속/그래핀/산화막/반도체 구조에서 그래핀이 커패시턴스에 미치는 영향", 2011 Korean Carbon Society Spring Meeting, Seoul, Korea, May 19-20. 2011
- Jong Kyung Park, Youngmin Park, Seok-Hee Lee, Sung Kyu Lim, Jae Sub Oh, Moon Sig Joo, Kwon Hong, and Byung Jin Cho, "Enhancement of High temperature Data Retention by La2O3-Doped Nitride for Charge-Trap Type Flash Memory Device", 18th Korean Conference on Semiconductors, Jeju, Korea, Feb. 2011
- Jong Kyung Park, Youngmin Park, Sung Kyu Lim, Jae Sub Oh, Moon Sig Joo, Kwon Hong, and Byung Jin Cho, “In-Depth Study on Mechanism of the Performance Improvement by High Temperature Annealing of the Al2O3 in a Charge-Trap Type Flash Memory Device", International Conference on Solid State Devices and Materials (SSDM), Tokyo, Japan, Sep. 22-24, 2010
◾ Hee young Bae, Jong Kyung Park, Analysis of Program Speed Degradation with ON Pitch Scaling in 3D NAND Flash Memory, Korean Conference on Semiconductors, 경주화백컨벤션센터, 2024박종경
◾ Hyeon Seo Yun, Jong Kyung Park, Enhancing Reliability in 3D NAND Memory: A New Programming Scheme for Z-Interference Reduction, Korean Conference on Semiconductors, 경주화백컨벤션센터, 2024박종경
◾ Jihun Kim, Sang Woo Park, Min Seong Jung, Yeon Ju Kim, Jong Kyung Park, Polymer-Dielectric Hybrid Bonding for 3D Multi-chip Stacking Process, Korean Conference on Semiconductors, 경주화백컨벤션센터, 2024박종경
◾ Min Seong Jeong, Sang Woo Park, Yeon Ju Kim, Ji Hoon Kim, Jong Kyung Park, Research on metal passivation crystallinity to improve low-temperature copper bonding performance, Korean Conference on Semiconductors, 경주화백컨벤션센터, 2024박종경
◾ Ye Eun Kim, Jong Kyung Park, Investigation of Z-interference based on The Confined Nitride Trap Layer Structure in 3D NAND Flash Memory, Korean Conference on Semiconductors, 경주화백컨벤션센터, 2024박종경
◾ Sang Woo Park, Min Seong Jeong, Jong Kyung Park, 저온 Cu-Cu 직접 결합을 위한 금속 패시베이션 공정의 발전, ISOCC 2023 Proceeding, Ramada Plaza Jeju Hotel, 2023박종경
◾ Yeon Ju Kim, Sang Woo Park, Min Seong Jeong, Jong Kyung Park, Understanding the Diffusion Behavior and Chip-Level Bonding for Low-Temperature Copper Hybrid Bonding, Journal of the Microelectronics and Packaging Society, Paradise Hotel Busan, 2023박종경
◾ Yeon Ju Kim, Sang Woo Park, Min Seong Jeong, Jong Kyung Park, Low Temperature Cu-Cu Direct Bonding with Ruthenium Passivation Layer, Journal of the Microelectronics and Packaging Society, Paradise Hotel Busan, 2023박종경
◾ Yeon Ju Kim, Sang Woo Park, Min Seong Jeong, Jong Kyung Park, The Impact of CMP Process on Cu-SiO2 Hybrid Bonding, Journal of the Microelectronics and Packaging Society, Paradise Hotel Busan, 2023박종경
◾ Ji hoon Kim, Yeon Ju Kim, Sang Woo Park, Min Seong Jeong, Jong Kyung Park, Polymer-Dielectric Hybrid Bonding for 3D Multi-chip Stacking Process, Journal of the Microelectronics and Packaging Society, Paradise Hotel Busan, 2023박종경
◾ 김예은, 박종경, Z-interference characteristics based on confined nitride trap layer structures in 3D NAND, Summer Annual Conference of IEIE, 2023, 제주호텔 제주(중문), 2023박종경
◾ 황진경, 박종경, Z-Interference Improvement in 3D NAND Flash Memory Using Asymmetric Program Vpass, Summer Annual Conference of IEIE, 2023, 롯데호텔 제주(중문), 2023박종경
◾ 정민성, 박종경, Study on the Cause of Metal Diffusion Behavior for Low-Temperature Copper Hybrid Bonding, Journal of the Microelectronics and Packaging Society, 수원컨벤션센터 4F (광교중앙역, 경기도 수원시 영통구 광교중앙로 140), 2023박종경
◾ 박상우, 박종경, A Study of the grain size of metal passivation thin film for low temperature hybrid bonding, Journal of the Microelectronics and Packaging Society, 수원컨벤션센터 4F (광교중앙역, 경기도 수원시 영통구 광교중앙로 140), 2023박종경
- NONVOLATILE MEMORIES-Materials, Devices and Applications (Chapter 9 “Application of a High-k Dielectric for a Flash-Memory Device”), Jong Kyung Park, Tseung-Yuen Tseng, Simon M. Sze, and Byung Jin Cho, AMERICAN SCIENTIFIC PUBLISHERS, 2012
- 메모리 장치 및 이의 동작 방법(Memory device and method of operating the same), 1020190091216, 2019
- 반도체 장치 및 반도체 장치의 동작 방법(SEMICONDUCTOR DEVICE AND OPERATING METHOD OF SEMICONDUCTOR DEVICE), 1020190068167, 2019
- 반도체 메모리 장치 및 그 동작 방법(SEMICONDUCTOR MEMORY DEVICE AND OPERATING METHOD THEREOF), 1020190140458, 2019
- 반도체 메모리 장치 및 이의 동작 방법(SEMICONDUCTOR MEMORY DEVICE AND OPERATING METHOD THEREOF), 1020160037530, 2016
- NON-VOLATILE MEMORY DEVICE AND MOSFET USING GRAPHENE GATE ELECTRODE, US patent, 13,342,282, 2012
- 반도체 장치의 박막 형성 방법(METHOD FOR FABRICATING THIN FILM IN SEMICONDUCTOR DEVICE), 1020110068442, 2011
- 비휘발성 메모리 소자 및 그 제조 방법(NON-VILATILE MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME), 1020100013637, 2010
- Study on Characteristics of Interface between Polysilicon Channel and Tunnel Oxide in 3D Flash Memory Device, SK Hynix, 2013 – 2014
- Study on Juntionless Charge Trap Device for 3D NAND Flash Memory, SK Hynix, 2012-2013
- Device Operation Modeling for Retention Improvement of CTF Flash Memory, SK Hynix, 2011-2012
- Improvement of Data Retention of Flash Memory Using ALD charge trap layer, SK Hynix, 2010-2011
- Development of composite element implementation technology for organic and inorganic nanomaterials, Ministry of Education, Science and Engineering, 2009-2014
- Development of high-K dielectric process for Flash memory, SK Hynix, 2008-2010
Faculty
