About DSE
(Department of Semiconductor Engineering)
교수소개
이름
박대웅
전공
집적회로 및 시스템 설계
TEL
02-970-9754
E-mail
dwpark@seoultech.ac.kr
연구실
상상관 605호
학력
- 2018.02 KAIST, Electrical Engineering (Ph.D.)
- 2015.02 KAIST, Electrical Engineering (M.S.)
- 2013.02 Sunkyunkwan University, Semiconductor Systems Engineering (B.S.)
주요 경력
- 2023.03-Present Seoul National Univ. of Science and Technology (Assistant Professor)
- 2022.03-2023.02 Kumoh National Institute of Technology (Assistant Professor)
- 2019.05-2022.02 Interuniversity Microelectronic Center (Senior Researcher)
- 2018.03-2019.02 KAIST (Postdoctoral Researcher)
주요논문 및 저서
- A D-Band Low-Power High-Efficiency Frequency Multiply-by-9 FMCW Radar Transmitter in 28 nm CMOS, IEEE Journal of Solid-State Circuits, 2022
- Design of High-Gain Sub-THz Regenerative Amplifiers Based on Double-Gmax Gain Boosting Technique, IEEE Journal of Solid-State Circuits, 2021
- A D-Band High-Gain and Low-Power LNA in 65-nm CMOS by Adopting Simultaneous Noise- and Input-Matched Gmax-Core, IEEE Transactions on Microwave Theory and Techniques, 2021
- A 230-260 GHz Wideband and High-Gain Amplifier in 65nm CMOS Based on Dual-Peak Gmax-core, IEEE Journal of Solid-State Circuits, 2019
- A 247 and 272 GHz Two-Stage Regenerative Amplifiers in 65 nm CMOS with 18 and 15 dB Gain Based on Double-Gmax Gain Boosting Technique, IEEE Symposium on VLSI Circuits, 2020
- A 293 / 440 GHz Push-Push Double Feedback Oscillators with 5.0 / -3.9 dBm Output Power and 2.9 / 0.6 % DC-to-RF Efficiency in 65 nm CMOS, IEEE Symposium on VLSI Circuits, 2020
- A 230–260 GHz Wideband Amplifier in 65 nm CMOS Based on Dual-Peak Gmax-core, IEEE Symposium on VLSI Circuits, 2017
저널 논문
-A 67 mW D-Band FMCW I/Q Radar Receiver with an N-Path Spillover Notch Filter in 28 nm CMOS, IEEE Journal of Solid-State Circuits, 2022
- A D-Band Low-Power High-Efficiency Frequency Multiply-by-9 FMCW Radar Transmitter in 28 nm CMOS, IEEE Journal of Solid-State Circuits, 2022
- Design of High-Gain Sub-THz Regenerative Amplifiers Based on Double-Gmax Gain Boosting Technique, IEEE Journal of Solid-State Circuits, 2021
- A D-Band Power Amplifier in 65-nm CMOS by Adopting Simultaneous Output Power- and Gain-Matched Gmax-core, IEEE Access, 2021
- A 264 GHz, 2.3 dBm Push-Push Transformer-Based Hartley Oscillator, IEEE Microwave and Wireless Components Letters, 2021
- A D-Band High-Gain and Low-Power LNA in 65-nm CMOS by Adopting Simultaneous Noise- and Input-Matched Gmax-Core, IEEE Transactions on Microwave Theory and Techniques, 2021
- A 250 GHz 12.6 dB Gain and 3.8 dBm Psat Power Amplifier in 65 nm CMOS Adopting Dual-Shunt Elements Based Gmax-core, IEEE Microwave and Wireless Components Letters, 2021
- 500 GHz CMOS Heterodyne Imager Adopting Fourth Subharmonic Passive Mixer, Microwave and Optical Technology Letters, 2020
- A 270 GHz Push-Push Transformer-Based Oscillator Adopting Power Leakage Minimization Technique, Electronics, 2019
- A 230-260 GHz Wideband and High-Gain Amplifier in 65nm CMOS Based on Dual-Peak Gmax-core, IEEE Journal of Solid-State Circuits, 2019
- Effects of Parasitic Source-Drain Junction Area on THz Responsivity of MOSFET Detector, IEEE Transactions on Terahertz Science and Technology, 2018
- High-Power 268-GHz Push-Push Transformer-Based Oscillator with Capacitive Degeneration, IEEE Microwave and Wireless Components Letters, 2018
- A 280-/300-GHz Three-Stage Amplifiers in 65-nm CMOS with 12- / 9-dB Gain and 1.6 / 1.4% PAE While Dissipating 17.9 mW, IEEE Microwave and Wireless Components Letters, 2018
- Nonlinear Analysis of Non-Resonant THz Response of MOSFET and Implementation of a High-Responsivity Cross-Coupled THz Detector, IEEE Transactions on Terahertz Science and Technology, 2018
- MOSFET Characteristics for Terahertz Detector Application From On-Wafer Measurement, IEEE Transactions on Terahertz Science and Technology, 2015
◾ H-Band_Power_Amplifiers_in_65-nm CMOS by Adopting Output Power Maximized Gmax-Core and Transmission Line-Based Zero-Degree Power Combining Networks, IEEE 고체 회로 저널, vol.58 No.11 pp.3089~3102, 2023박대웅
◾ A 201- and 283-GHz Dual-Band Amplifier in 65-Nm CMOS Adopting Dual-Frequency Gmax-Core With Dual-Band Matching, IEEE 트랜잭션 온 테라헤르츠 사이언스 & 테크놀로지, vol.13 No.3 pp.221~230, 2023박대웅
학술대회
- 280.2/309.2 GHz, 18.2/9.3 dB Gain, 1.48/1.4 dB Gain-per-mW, 3-Stage Amplifiers in 65nm CMOS Adopting Double-embedded-Gmax-core, IEEE Radio Frequency Integrated Circuits Symposium, 2022
- 245/243 GHz, 9.2/10.5 dBm Saturated Output Power, 4.6/2.8 % PAE, and 28/26 dB Gain Power Amplifiers in 65 nm CMOS Adopting 2- and 4-way Power Combining, IEEE Asian Solid-State Circuits Conference, 2021
- A 67 mW D-Band FMCW I/Q Radar Receiver with an N-Path Spillover Notch Filter in 28 nm CMOS, IEEE European Solid State Circuits Conference, 2021
- A 135-155 GHz 9.7 %/16.6 % DC-RF/DC-EIRP Efficiency Frequency Multiply-by-9 FMCW Transmitter in 28 nm CMOS, IEEE Radio Frequency Integrated Circuits Symposium, 2021
- A 247 and 272 GHz Two-Stage Regenerative Amplifiers in 65 nm CMOS with 18 and 15 dB Gain Based on Double-Gmax Gain Boosting Technique, IEEE Symposium on VLSI Circuits, 2020
- A 293 / 440 GHz Push-Push Double Feedback Oscillators with 5.0 / -3.9 dBm Output Power and 2.9 / 0.6 % DC-to-RF Efficiency in 65 nm CMOS, IEEE Symposium on VLSI Circuits, 2020
- A 230–260GHz Wideband Amplifier in 65 nm CMOS Based on Dual-Peak Gmax-core, IEEE Asia and South Pacific Design Automation Conference, 2018
- 0.5 and 1.5 THz Monolithic Imagers in a 65 nm CMOS Adopting a VCO-Based Signal Processing, IEEE Asian Solid-State Circuits Conference, 2017
- A 230–260 GHz Wideband Amplifier in 65 nm CMOS Based on Dual-Peak Gmax-core, IEEE Symposium on VLSI Circuits, 2017
특허
- Differential Amplifier and Method for Achieving Maximum Achievable Gain of a Differential Amplifier, Appl. No. : US2022/0385254 A1, 2021
- A High-Gain Amplifier Based on Dual-Gain Boosting, Appl. No. : 17/336,832, 2021
- Antenna Module For Transmitting or Receiving Terahertz Waves and Focal Plane Array Structure For Real-Time Terahertz Imaging, Grant No. : 9,625,322, 2017
- Terahertz Receiver and Terahertz Imaging Sensor Apparatus for High Data Rate, Appl. No. : 14/614,726, 2016
- Image Sensing Device and Focal Plane Array Device using Frequency Conversion for Real-Time Terahertz Imaging, Grant No. : US 9,341,709, 2016
- Differential Amplifier and Method for Achieving Maximum Achievable Gain of a Differential Amplifier, Appl. No. : EP 21176438.6, 2021
- 세 수동소자 기반 임베딩 네트워크를 통한 고이득 파워 증폭기 및 저잡음 증폭기, Appl. No. : 10-2020-0174470, 2020
- 듀얼 피크를 기반으로 한 광대역 증폭기 및 듀얼 피크를 기반으로 한 광대역 증폭기에 포함된 트랜스미션 라인의 물리적 특성값을 연산하는 연산 장치, Grant No. : 10-2055727, 2019
- 마그네틱 커플링을 이용하여 결합된 차동 콜핏 오실레이터, Grant No. : 10-2055726, 2019
- 듀얼 이득 증폭이 가능한 고이득 증폭기, Appl. No. : 10-2019-0026277, 2019
- 고해상도 테라헤르츠 이미징을 위한 초점면 어레이 기반 동일 평면 온-오프 패치 안테나, Grant No. : 10-1871872, 2018
- 고감도 테라헤르츠 검출기, Grant No. : 10-1722734, 2018
- 고속 데이터 출력용 테라헤르츠 수신기 및, 고속 데이터 출력용 테라헤르츠 이미징 센서 장치, Grant No. : 10-1675977, 2016
- 테라헤르츠파를 송수신하기 위한 안테나 모듈 및 실시간 테라헤르츠 이미징을 위한 초점면 배열 구조체, Grant No. : 10-1541827, 2015
- 실시간 테라헤르츠 이미징을 위해 주파수 변환을 이용한 이미징 센서 장치 및 초점면 배열 이미징 장치, Grant No. : 10-1533236, 2015
연구프로젝트
- CMOS-based 200-300 GHz Wideband and High-Sensitivity Spectroscopy System, National Research Foundation, 2022~2025
- Development of D-band MIMO Transceiver for High-Data-Rate Communication, IMEC, 2021~2022
- Development of D-band MIMO Transceiver for FMCW Radar, IMEC, 2019~2021
- Design of 5G and B5G Front-End-Module in Compound Semiconductor Process, IMEC, 2019
- Research on THz Imaging and Spectroscopy Systems, KAIST, 2018~2019
- Development of THz System Integrated Circuit Technologies Based on BTFET/PWT, KAIST, 2013~2018
[01811] 서울 노원구 공릉로 232 서울과학기술대학교 상상관 419호 지능형반도체공학과
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